IPW65R110CFDFKSA1 is Obsolete and no longer manufactured.
Available Substitutes:

Parametric Equivalent


Infineon Technologies
In Stock: 27
Unit Price: $7.69000
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Datasheet
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPW65R110CFDFKSA1

DigiKey Part Number
448-IPW65R110CFDFKSA1-ND
Manufacturer
Manufacturer Product Number
IPW65R110CFDFKSA1
Description
MOSFET N-CH 650V 31.2A TO247-3
Customer Reference
Detailed Description
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3-1
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
277.8W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
Associated Products
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IPW65R110CFDFKSA2Infineon Technologies27448-IPW65R110CFDFKSA2-ND$7.69000Parametric Equivalent
FCH110N65F-F155onsemi805FCH110N65F-F155-ND$9.25000Similar
FCH150N65F-F155onsemi232FCH150N65F-F155-ND$7.60000Similar
SIHG33N65EF-GE3Vishay Siliconix0SIHG33N65EF-GE3-ND$8.65000Similar
STW30N65M5STMicroelectronics600497-10655-5-ND$7.17000Similar
Obsolete
This product is no longer manufactured. View Substitutes
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