N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
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IRFBE30PBF

DigiKey Part Number
IRFBE30PBF-ND
Manufacturer
Manufacturer Product Number
IRFBE30PBF
Description
MOSFET N-CH 800V 4.1A TO220AB
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBE30PBF Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Type
Power Dissipation (Max)
125W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
800 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IRFBE30PBF-BE3Vishay Siliconix466742-IRFBE30PBF-BE3-ND$4.33000Direct
IXTP4N80PIXYS0IXTP4N80P-ND$4.21000Similar
STP3NK60ZSTMicroelectronics979497-7525-5-ND$2.51000Similar
STP4NK80ZSTMicroelectronics507497-3192-5-ND$2.94000Similar
STP5NK80ZSTMicroelectronics0497-7527-5-ND$3.24000Similar
In-Stock: 335
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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$4.97000$4.97
10$3.28600$32.86
50$2.56340$128.17
100$2.33080$233.08
500$1.92326$961.63
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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